대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2003년도 하계학술대회 논문집 C
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- Pages.1556-1558
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- 2003
고속전철용 고전압 IGCT소자의 전기적 특성
Electrical Characteristics of High Voltage IGCT Devices for Rapid Electronic Railway
- Kim, Sang-Cheol (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
- Seo, Kil-Soo (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
- Kim, Hyong-Woo (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
- Kim, Eun-Dong (Korea Electrotechnology Research Institute, Power Semiconductor Group)
- 발행 : 2003.07.21
초록
IGCT devices is a superior devices for power conversion purpose. The basic structure of the IGCT devices is same as that of GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. In this paper, we present static and dynamic characteristics of 4.5 kV PT-type IGCT devices as a function of minority carrier lifetime, n-base thickness and n-buffer thickness. We should choose proper structural parameters for good electrical characteristics of GCT devices.
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