Development of Ceria-Based Slurry with High Selectivity for STI CMP

  • Lim, G. (Nano-Materials Research Center, Korea Institute of Science and Technology) ;
  • Kim, T.E. (Nano-Materials Research Center, Korea Institute of Science and Technology) ;
  • Kim, J. (Nano-Materials Research Center, Korea Institute of Science and Technology) ;
  • Lee, J.H. (Nano-Materials Research Center, Korea Institute of Science and Technology) ;
  • Lee, H.W. (Nano-Materials Research Center, Korea Institute of Science and Technology)
  • 발행 : 2002.10.21

초록

Nano-Crystalline $CeO_2$ particles were dispersed in deionized water with controlled slurry chemicals for CMP test. According to the CMP test, the removal rate of $SiO_2$ layer was mainly controlled by the size and crystallinity of $CeO_2$ particles which can be controlled by the heat-treatment condition during $CeO_2$ synthesis. In contrast, the removal rate of $Si_3N_4$ layer was significantly influenced by the passivation reagent which protects the $Si_3N_4$ surface layer from excessive dissolution during CMP.

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