한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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- Pages.198-201
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- 2002
100nm 이하 CMOS 소자의 Source/Drain dopant 종류에 따른 Nickel silicide의 특성분석
Analysis of Dopant dependence in Ni-Silicide for Sub-l00 nm CMOS Technology
- 배미숙 (충남대학교 전자공학과) ;
- 김용구 (충남대학교 전자공학과) ;
- 지희환 (충남대학교 전자공학과) ;
- 이헌진 (충남대학교 전자공학과) ;
- 오순영 (충남대학교 전자공학과) ;
- 윤장근 (충남대학교 전자공학과) ;
- 박성형 ((주) 하이닉스 반도체 System IC Logic 소자 개발팀) ;
- 왕진석 (충남대학교 전자공학과) ;
- 이희덕 (충남대학교 전자공학과)
- Bae, Mi-Suk (Dept. of electronics Engineering, Chungnam National University) ;
- Kim, Yong-Goo (Dept. of electronics Engineering, Chungnam National University) ;
- Ji, Hee-Hwan (Dept. of electronics Engineering, Chungnam National University) ;
- Lee, Hun-Jin (Dept. of electronics Engineering, Chungnam National University) ;
- Oh, Soon-Young (Dept. of electronics Engineering, Chungnam National University) ;
- Yun, Jang-Gn (Dept. of electronics Engineering, Chungnam National University) ;
- Park, Sung-Hyung (Hynix semiconductor Inc. System IC R&D Division) ;
- Wang, Jin-Suk (Dept. of electronics Engineering, Chungnam National University) ;
- Lee, Hi-Deok (Dept. of electronics Engineering, Chungnam National University)
- 발행 : 2002.11.07
초록
In this paper, the dependence of Ni-silicide properties such as sheet resistance and cross-sectional profile on the dopants have been characterized. There was little dependence of sheet resistance on the used dopants such as As, P,