한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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- Pages.35-38
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- 2002
공통 소스라인을 갖는 SONOS NOR 플래시 메모리의 쓰기 특성
The Write Characteristics of SONOS NOR-Type Flash Memory with Common Source Line
- An, Ho-Myoung (Kwangwoon Univ.) ;
- Han, Tae-Hyeon (Kwangwoon Univ.) ;
- Kim, Joo-Yeon (Ulsan Science College) ;
- Kim, Byung-Cheul (Jinju National Univ.) ;
- Kim, Tae-Geun (Kwangwoon Univ.) ;
- Seo, Kwang-Yell (Kwangwoon Univ.)
- 발행 : 2002.11.07
초록
In this paper, the characteristics of channel hot electron (CHE) injection for the write operation in a NOR-type SONOS flash memory with common source line were investigated. The thicknesses of he tunnel oxide, the memory nitride, and the blocking oxide layers for the gate insulator of the fabricated SONOS devices were