Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2002.11a
- /
- Pages.23-26
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- 2002
CMP Characteristics of Silca Slurry by Adding of Alumina Abrasive
알루미나 연마제가 첨가된 실리카 슬러리의 CMP 특성
- Park, Chang-Jun (NIMDL of DAEBUL University) ;
- Seo, Yong-Jin (NIMDL of DAEBUL University) ;
-
Choi, Woon-Shik
(NIMDL of DAEBUL University)
;
- Kim, Chul-Bok (DONGSUNG A&T) ;
- Kim, Sang-Yong (ANAM Semiconducter) ;
- Lee, Woo-Sun (CHOSUN University)
- 박창준 (대불대학교 나노정보소재연구소) ;
- 서용진 (대불대학교 나노정보소재연구소) ;
-
최운식
(대불대학교 나노정보소재연구소)
;
- 김철복 (동성 A&T) ;
- 김상용 (아남 반도체) ;
- 이우선 (조선대학교)
- Published : 2002.11.07
Abstract
In this paper, We have studied the CMP (chemical mechanical polishing) characteristics of diluted slurry by adding of raw alumina abrasive and annealed alumina abrasive. As a experimental results, we obtained the comparable slurry characteristics compared with original silica slurry in the view point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.