Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2002.04b
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- Pages.38-41
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- 2002
Effect of deposition temperature on the photoluminescence of Si nanocrystallites thin films
증착 온도에 따른 실리콘 나노결정 박막의 광학적 특성변화 연구
- Published : 2002.04.27
Abstract
The variation of photoluminescence(PL) properties of Si thin films was investigated by changing deposition temperatures, Si-rich silicon oxide films on p-type (100) Si substrate have been fabricated by pulsed laser deposition(PLD) technique using a Nd:YAG laser. During deposition, the substrates were kept at the temperature range of room temperature(RT) to