Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2002.08a
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- Pages.128-132
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- 2002
Properties of Magneto-resistance by annealing using by co-sputtering method
co-sputtering법으로 제조한 Insb박막의 후열처리기술에 의한 자기저항 특성
- Published : 2002.08.24
Abstract
Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure(