Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2002.07b
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- Pages.964-967
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- 2002
A Study of High-efficiency me-silicon solar cells for SiNx passivation
SiNx passivation에 따른 Solar Cell의 효율향상에 관한 연구
Abstract
The effectiveness of silicon nitride SiNx surface passivation is investigated and quantified. This study adopted single-layer antireflection (SLAR) coating of SiNx for efficiency improvement of solar cell. The silicon nitride films were deposited by means of plasma enhanced chemical vapor deposition (PECVD) in planar coil reactor. The process gases used were pure ammonia and a mixture of silane and helium. The thickness and the refractive index on the films were measured by ellipsometry and chemical bonds were determined by using an FT-IR equipment. This films obtained were analyzed in term of hydrogen content, refractive index for gas flow ratio