Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2002.07b
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- Pages.553-555
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- 2002
The fabrication of rf termination power resistor
고주파용 Termination 파워저항의 제작
Abstract
We were fabricated of rf power resisotor on AlN substrates by thick film process. The characteristics of capacitance and microwave are measured by digital LCR meter and Network analyzer(HP8532D). The results are shown that capacitances are slight greater and microwave characteristics are good values.