한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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- Pages.1028-1031
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- 2002
Semiconductor Nanowires;Their Emission Stability and Energy Distribution
- Yu, Se-Gi (NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology) ;
- Yi, Whi-Kun (NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology) ;
- Lee, Sang-Hyun (NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology) ;
- Heo, Jung-Na (NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology) ;
- Jeong, Tae-Won (NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology) ;
- Lee, Jeong-Hee (NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology) ;
- Lee, Soo-Chang (NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology) ;
- Kim, J.M. (NCRI, Center for Electron Emission Source, Samsung Advanced Institute of Technology) ;
- Lee, Cheol-Jin (Department of Nanotechnology, Hangyang University) ;
- Lyu, Seung-Chul (Department of Nanotechnology, Hangyang University) ;
- Han, Jae-Hee (Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University) ;
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Yoo, Ji-Beom
(Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University)
- 발행 : 2002.08.21
초록
Ga-based semiconductor nanowires (GaN, GaP) were synthesized by the reaction of Ga metal and GaN/GaP powder with a
키워드