한국정보디스플레이학회:학술대회논문집
- 2002.08a
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- Pages.575-578
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- 2002
Pentacene TFTs with Photoaligned Gate Insulator Surface
- Lee, Jong-Hyuk (Dept. of Electrical & Control Engineering, Hongik University) ;
- Kang, Chang-Heon (Dept. of Electrical & Control Engineering, Hongik University) ;
- Choi, Jong-Sun (Dept. of Electrical & Control Engineering, Hongik University) ;
- Song, Dong-Mee (Dept. of Chemical Engineering, Hongik University) ;
- Shin, Dong-Myung (Dept. of Chemical Engineering, Hongik University) ;
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Lee, Sin-Doo
(School of Electrical Engineering, Seoul National University)
- Published : 2002.08.21
Abstract
In this work, the electrical characteristics of organic thin film transistors with the surface-treated organic gate insulator have been studied. For the surface treatment, the photoalignment technique was used. The field effect mobilities of the devices with PVP gate insulator was improved about ten times as high as those of TFTs without the insulator surface treatment.
Keywords