Two domain TN structure with stable TN boundaries

  • Published : 2002.08.21

Abstract

On the half area of a pixel, pretilt angle was decreased by UV radiation and two domain TN was induced by the pretilt difference. In this structure, ITO slit was made inside pixel electrode on the TFT substrate to stabilize domain boundaries. The result shows that this structure is more resistant to outside stress and unwanted domain deformation is prevented.

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