The Fabrications of Vertical Trench Hall-Effect Device for Non-contact Angular Position Sensing Applications

비 접촉 각도 센서 응용을 위한 수직 Hall 소자의 제작

  • Park, Byung-Hwee (School of Electronics and Information engineering, Yeungnam University) ;
  • Jung, Woo-Chul (School of Electronics and Information engineering, Yeungnam University) ;
  • Nam, Tae-Chul (School of Electronics and Information engineering, Yeungnam University)
  • 박병휘 (영남대학교 전자정보공학부) ;
  • 정우철 (영남대학교 전자정보공학부) ;
  • 남태철 (영남대학교 전자정보공학부)
  • Published : 2002.11.09

Abstract

We have fabricated a novel Vertical Trench Hall-Effect Device sensitive to the magnetic field parallel to the sensor chip surface for non-contact angular position sensing applications. The Vertical Trench Hall-Effect Device is built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 150 V/AT is measured.

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