Effects of Drive-in Process Parameters on the Residual Stress Profile of the p+ Silicon Film

후확산 공정 변수가 p+ 실리콘 박막의 잔류 응력 분포에 미치는 영향

The paper represents the effects of the drive-in process parameters on the residual stress profile of the p+ silicon film. For the quantitative determination of the residual stress profiles, the test samples are doped via the fixed boron diffusion process and four types of the thermal oxidation processes and consecutively etched by the improved process. The residual stress measurement structures with the different thickness are simultaneously fabricated on the same silicon wafer. Since the residual stress profile is not uniform along the direction normal to the surface, the residual stress is assumed to be a polynomial function of the depth. All of the coefficients of the polynomial are determined from the deflections of cantilevers and the displacement of a rotating beam structure. As the drive-in temperature or the drive-in time increases, the boron concentration decreases and the magnitude of the average residual tensile stress decreases. Also, near the surface of the p+ film the residual tensile stress is transformed into the residual compressive stress and its magnitude increases.