Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2002.11a
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- Pages.137-140
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- 2002
A study on the method for calculating the base-collector breakdown voltage of NPN BJT for integrated circuits
집적회로용 NPN BJT의 베이스-컬렉터간 역방향 항복전압 계산 방법에 관한 연구
- Lee, Eun-Gu (Dept. of Electronics Eng., Univ. of INHA) ;
- Lee, Dong-Ryul (Dept. of Information and Communication, Bucheon College) ;
- Kim, Tae-Han (Dept. of Electronics Eng., Univ. of INHA) ;
- Kim, Cheol-Seong (Dept. of Electronics Eng., Univ. of INHA)
- Published : 2002.11.09
Abstract
The algorithm for calculating the base-collector breakdown voltage of NPN BJT(Bipolar Junction Transistor) for integrated circuits is proposed. The method for calculating the electric field using the solution of Poisson's equation is presented and the method for calculating the breakdown voltage using the integration of ionization coefficients is presented. The base-collector breakdown voltage of NPN BJT using 20V process obtained from the proposed method shows an averaged relative error of 8.0% compared with the measured data.
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