Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2002.11a
- /
- Pages.122-123
- /
- 2002
CMP characteristics of sputtered Cu films for polishing time
스퍼터된 Cu웨이퍼의 연마횟수에 대한 CMP특성
- Lee, Woo-Sun (Chosun University) ;
- Son, Dong-Min (Chosun University) ;
-
Park, Jin-Seong
(Chosun University)
;
- Kim, Ju-Seung (Chosun University) ;
- Jeong, Chan-Mun (Chosun University) ;
- Seo, Yong-Jin (Daebul University)
- Published : 2002.11.09
Abstract
Cu CMP process control for global planarization of semiconductor surface were studied on a platen polisher by using an experimental copper slurry containing ceria as the abrasive component. In order to understand the process. a design of experiment was conducted. From the experiment. the effects of polishing parameters such as polishing pressure, platen speed, and speed of wafer carrier on the removal rate of copper and the uniformity in copper removal were calculated and discussed. In this study, process parameters of Cu CMP and WIWNU(Within Wafer Non Uniformity) were presented.
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