Cathodoluminescence properties of $Ga_2O_3$ and ZnO nanomaterials

$Ga_2O_3$와 ZnO 나노물질의 CL특성

  • Lee, Jong-Soo (Department of Electrical Engineering, Korea University) ;
  • Kang, Myung-Il (Department of Electrical Engineering, Korea University) ;
  • Park, Il-Woo (Seoul Branch, Korea Basic Science Institute, Korea University) ;
  • Sung, Man-Young (Department of Electrical Engineering, Korea University) ;
  • Kim, Sang-Sig (Department of Electrical Engineering, Korea University)
  • 이종수 (고려대학교 전기공학과) ;
  • 강명일 (고려대학교 전기공학과) ;
  • 박일우 (기초과학지원연구소, 서울분소) ;
  • 성만영 (고려대학교 전기공학과) ;
  • 김상식 (고려대학교 전기공학과)
  • Published : 2002.11.09

Abstract

$Ga_2O_3$ nanobelts were synthesized from mechanically ground GaN powders with a thermal annealing in a nitrogen atmosphere. The nanobelts are with the range of about $10{\sim}200nm$ width and $10{\sim}50nm$ thickness. Three different ZnO nanomaterials (nanobelts, nanorods, and nanowires) were synthesized at three different substrate temperatures from the thermal evaporation of ball-milled ZnO powders at $1380^{\circ}C$. In cathodoluminescence(CL), the peak energy of near band-edge(NBE) emission was determined for nanobelts, nanorods, and nanowires.

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