Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Breakdown Characteristics of a Punch-through Diode with N+P+P-H+ Structure

N+P+P-N+ 구조를 가진 Punch-through 다이오드의 항복전압 특성

  • Song, Se-Won (Department of Electronics Engineering, Ajou University) ;
  • Chung, Sang-Koo (Department of Electronics Engineering, Ajou University) ;
  • Choi, Yearn-Ik (Department of Electronics Engineering, Ajou University)
  • 송세원 (아주대학교 전자공학과 전자소자연구실) ;
  • 정상구 (아주대학교 전자공학과 전자소자연구실) ;
  • 최연익 (아주대학교 전자공학과 전자소자연구실)
  • Published : 2002.11.09
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Abstract

Breakdown characteristics of a punch-through diode with n+p+p-n+ structure are analyzed with two-dimensional device simulation. Effects of base doping concentration and profile on the breakdown are presented. An analytical expression of a maximum base doping level for the punch-through breakdown is derived. The diode with a linearly graded base doping shows superior leakage current and capacitance is satisfactory for applications for low-voltage circuits.

Keywords