$RuO_2$ Related Schottky contact for GaN/AlGaN device

  • Jung, Byung-Kwon (School of Electronics and Electric Engineering, Kyungpook National University) ;
  • Kim, Jung-Kyu (School of Electronics and Electric Engineering, Kyungpook National University) ;
  • Lee, Jung-Hee (School of Electronics and Electric Engineering, Kyungpook National University) ;
  • Hahm, Sung-Ho (School of Electronics and Electric Engineering, Kyungpook National University)
  • 발행 : 2002.11.01

초록

$RuO_2$/GaN and related contacts were investigated for Schottky contacts in GaN-Based optical and electronic devices. We demonstrated that an $RuO_2$ film forms a stable Schottky contact on a GaN layer with a barrier height (${\Phi}_B$) of 1.46 eV and transmittance of 70% in the visible and near UV region. $RuO_2$/GaN Schottky diode showed a breakdown at over -50V and leakage current of only 0.3 nA at -5V. The $RuO_2$/GaN Schottky type photodetector had the UV/Visible rejection ratio of over $10^5$ and the responsivity of 0.23 A/W at 330 nm. The $RuO_2$ gate AlGaN/GaN EFET exhibited high drain current ($I_d$) of 689.3 mA/mm and high transconductance ($g_m$) of 197.4 mS/mm. Cut-Off frequency ($f_t$) and maximum operating frequency ($f_{max}$) were measured as 27.0 GHz and 45.5 GHz, respectively.

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