한국자기학회:학술대회 개요집 (Proceedings of the Korean Magnestics Society Conference)
- 한국자기학회 2002년도 동계연구발표회 논문개요집
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- Pages.188-189
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- 2002
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- 2233-9485(pISSN)
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- 2233-9574(eISSN)
SPIN ENGINEERING OF FERROMAGNETIC FILMS VIA INVERSE PIEZOELECTRIC EFFECT
- Lee, Jeong-Won (KAIST) ;
- Shin, Sung-Chul (KAIS) ;
- Kim, Sang-Koog (Seoul National University)
- 발행 : 2002.12.01
초록
One of the current goals in memory device developments is to realize a nonvolatile memory, i.e., the stored information maintains even when the power is turned off. The representative candidates for nonvolatile memories are magnetic random access memory (MRAM) and ferroelectric random access memory (FRAM). In order to achieve a high density memory in MRAM device, the external magnetic field should be localized in a tiny cell to control the direction of spontaneous magnetization. (omitted)
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