Proceedings of the Korean Magnestics Society Conference (한국자기학회:학술대회 개요집)
- 2002.12a
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- Pages.146-147
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- 2002
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- 2233-9485(pISSN)
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- 2233-9574(eISSN)
Ferromagnetism and Magnetotransport of GaMnN
- Kim, K. H. (Department of Materials Engineering, Chungnam National University) ;
- Lee, K. J. (Department of Materials Engineering, Chungnam National Universit) ;
- Kim, D. J. (Department of Materials Engineering, Chungnam National Universit) ;
- Kim, C. S. (Korea Research institute of Standard and Scienc) ;
- Kim, C. G. (Korea Research Institute of Chemical Technolog) ;
- S. H. Yoo (Korea Research Institute of Chemical Technolog) ;
- Lee, H. C. (Korea Basic Science Institut) ;
- Kim, H. J. (Department of Materials Engineering, Chungnam National Universit) ;
- Y. E. Ihm (Department of Materials Engineering, Chungnam National University)
- Published : 2002.12.01
Abstract
III-V magnetic semiconductors initiated by GaMnAs growth at low temperatures via molecular beam epitaxy (MBE) has been a hot issue recently for their possible application to spntronics. GaMnN may be one of the candidates for room temperature operating ferromagnetic semiconductors as proposed by a theoretical calculation, However, since GaN was grown at very high temperatures above ∼750
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