Ferromagnetism and Magnetotransport of GaMnN

  • Kim, K. H. (Department of Materials Engineering, Chungnam National University) ;
  • Lee, K. J. (Department of Materials Engineering, Chungnam National Universit) ;
  • Kim, D. J. (Department of Materials Engineering, Chungnam National Universit) ;
  • Kim, C. S. (Korea Research institute of Standard and Scienc) ;
  • Kim, C. G. (Korea Research Institute of Chemical Technolog) ;
  • S. H. Yoo (Korea Research Institute of Chemical Technolog) ;
  • Lee, H. C. (Korea Basic Science Institut) ;
  • Kim, H. J. (Department of Materials Engineering, Chungnam National Universit) ;
  • Y. E. Ihm (Department of Materials Engineering, Chungnam National University)
  • Published : 2002.12.01

Abstract

III-V magnetic semiconductors initiated by GaMnAs growth at low temperatures via molecular beam epitaxy (MBE) has been a hot issue recently for their possible application to spntronics. GaMnN may be one of the candidates for room temperature operating ferromagnetic semiconductors as proposed by a theoretical calculation, However, since GaN was grown at very high temperatures above ∼750$^{\circ}C$ even with MBE, it is expected that the incorporation of Mn into GaN will be limited. (omitted)

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