Proceedings of the KWS Conference (대한용접접합학회:학술대회논문집)
- 2002.10a
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- Pages.65-69
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- 2002
ANODICALLY-BONDED INTERFACE OF GLASS TO ALUMINIUM
- Takahashi, Makoto (Joining and Welding Research Institute) ;
- Nishikawa, Satoru (Japan Power Engineering and Inspection) ;
- Chen, Zheng (Department of Material Science and Engineering, East China Shipbuilding Institute) ;
- Ikeuchi, Kenji (Joining and Welding Research Institute)
- Published : 2002.10.01
Abstract
An Al film deposited on the Kovar alloy substrate was anodically-bonded to the borosilicate glass, and the bond interfaces was closely investigated by transmission electron microscopy. Al oxide was found to form a layer ~l0 nm thick at the bond interface, and fibrous structure of the same oxide was found to grow epitaxially in the glass from the oxide layer. The fibrous structure grew with the bonding time. The mechanism of the formation of this fibrous structure is proposed on the basis of the migration of Al ions under the electric field. Penetration of Al into glass beyond the interfacial Al oxide was not detected. The comparison of the amount of excess oxygen ions generated in the alkali depletion layer with that incorporated in the Al oxide suggests that the growth of the alkali-ion depletion layer is controlled by the consumption of excess oxygen to form the interfacial Al oxide.
Keywords
- Anodic bonding;
- aluminum;
- boresilicate glass;
- interfacial reaction layer;
- transmission electron microscopy