Deposition of Ce$O_{2}$ buffer layer for YBCO coated conductors on hi-axially textured Ni substrate by MOCVD technique

양축 정렬된 Ni기판 위에 MOCVD법에 의한 YBCO 초전도 선재용 Ce$O_{2}$ 완충층의 증착

  • 김호진 (한국원자력연구소 원자력재료기술개발팀, 성균관대학교 신소재공학과) ;
  • 주진호 (성균관대학교 신소재공학과) ;
  • 전병혁 (한국원자력연구소 원자력재료기술개발팀) ;
  • 정충환 (한국원자력연구소 원자력재료기술개발팀) ;
  • 박순동 (한국원자력연구소 원자력재료기술개발팀) ;
  • 박해웅 (한국기술교육대학교 금속·재료공학과) ;
  • 홍계원 (한국산업기술대학교 전자공학과) ;
  • 김찬중 (한국원자력연구소 원자력재료기술개발팀)
  • Published : 2002.02.01

Abstract

Textured Ce$O_{2}$ buffers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition The texture of deposited Ce$O_{2}$ films was varied with deposition temperature(T) and oxygen partial pressure($Po_{2}$). ($\ell$ 00) textured Ce$O_{2}$ films were deposited at T= 500~$520^{\circ}C$, $Po_{2}$= 0.90~3.33 Torr. The growth rate of the Ce$O_{2}$ films was 150~200 nm/min at T= $520^{\circ}C$ and $Po_{2}$= 2.30 Torr, which was much faster than that prepated by other physical deposition method.

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