Fabrication and Characterization of Ru/Ni Substrates for Superconductor Applications

고온 초전도체를 위한 Ru/Ni 기판의 제조와 특성 분석

  • Kwangsoo No (Electronic and Optical Materials Laboratory, Dep. of Mat. Sci. & Eng., Korea Advanced Institute of Science and Technology) ;
  • Huyong Tian (Electronic and Optical Materials Laboratory, Dep. of Mat. Sci. & Eng., Korea Advanced Institute of Science and Technology) ;
  • Inki Hong (Electronic and Optical Materials Laboratory, Dep. of Mat. Sci. & Eng., Korea Advanced Institute of Science and Technology) ;
  • Hyunsuk Hwang (Electronic and Optical Materials Laboratory, Dep. of Mat. Sci. & Eng., Korea Advanced Institute of Science and Technology) ;
  • Tae-Hyun Sung (Korea Electric Power Research Institute)
  • Published : 2002.02.01

Abstract

Ru thin films were deposited on bi-axially textured Ni tape using rf-magnetron sputtering for a conductive buffer layer of high Tc superconductor applications. (002) textured Ni films were fabricated as the deposition temperature was over $600^{\circ}C$. Rocking curves of the films showed similar alignment to those the Ni tapes. The resistivity of the tapes fabricated below $600^{\circ}C$ was around 20$\mu\Omega$-cm which is good for the conductive layer for tape superconductor applications.

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