대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2002년도 ITC-CSCC -2
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- Pages.1038-1041
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- 2002
A Novel Trench Electrode BRT with the Intrinsic Region for Power Electronics
- Kang, Ey-Goo (Department of Electrical Engineering Korea University) ;
- Oh, Dae-Suk (Department of Electrical Engineering Korea University) ;
- Kim, Dae-Won (Department of Electrical Engineering Korea University) ;
- Kim, Dae-Jong (Department of Electrical Engineering Korea University) ;
- Sung, Man-Young (Department of Electrical Engineering Korea University)
- 발행 : 2002.07.01
초록
In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effect and forward blocking voltage more than the conventional BRT Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power device and applicate to another power device including IGBT, EST and etc,
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