SiGe Heterojunction Bipolar Transistor의 등가모델 파라미터 추출

Equivalent Model Parameter Extraction of SiGe Heterojunction Bipolar Transistor

A new method is developed to extract model parameters of SiGe HBT equivalent circuit including the base impedance and base-collector junction capacitance. Using this method, all resistances and capacitances of SiGe HBT are independently determined from measured S-parameters using two-port parameter formula. This method is proposed to reduce possible errors generated from global optimization process, and its accuracy has been verified by finding good agreements between measured and modeled current / power gain up to 18 GHz.