Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2002.06b
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- Pages.49-52
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- 2002
Equivalent Model Parameter Extraction of SiGe Heterojunction Bipolar Transistor
SiGe Heterojunction Bipolar Transistor의 등가모델 파라미터 추출
Abstract
A new method is developed to extract model parameters of SiGe HBT equivalent circuit including the base impedance and base-collector junction capacitance. Using this method, all resistances and capacitances of SiGe HBT are independently determined from measured S-parameters using two-port parameter formula. This method is proposed to reduce possible errors generated from global optimization process, and its accuracy has been verified by finding good agreements between measured and modeled current / power gain up to 18 GHz.
Keywords