대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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- Pages.5-8
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- 2002
Hot carrier에 의한 GAA MOSFET의 열화현상
Hot Carrier Induced Device Degradation in GAA MOSFET
초록
Hot carrier induced device degradation is observed in thin-film, gate-all-around SOI transistor under DC stress conductions. We observed the more significant device degradation in GAA device than general single gate SOI device due to the degradation of edge transistor. Therefore, it is expected that the maximum available supply voltage of GAA transistor is lower than that o( bulk MOSFET or single gale SOI device.
키워드