대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
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Ar/$O_2$비에 따른 (Bi,Ba,Sr)$TiO_3$[BBST] 박막의 구조적 특성

The structural properties of the (Bi,Ba,Sr)$TiO_3$[BBST] thin films with Ar/$O_2$ rates

  • 김정태 (광운대학교 전자재료공학과) ;
  • 이상철 (광운대학교 전자재료공학과) ;
  • 이성갑 (서남대학교 전자전기공학과) ;
  • 배선기 (인천대학교 전기과) ;
  • 이영희 (광운대학교 전자재료공학과)
  • 발행 : 2002.07.10
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초록

The (Bi,Ba,Sr)$TiO_3$[BBST] thin films were fabricated on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. We investigated the effects of Ar/$O_2$ rates on the structural properties of BBST thin films. Decreasing the $O_2$ rates, the intensity of $BaBi_4Ti_4O_{15}$ and $Bi_4Ti_3O_{12}$ peaks were increased but the $(Ba_{0.5}Sr_{0.5})TiO_3$ peak was decreased. In the case of BBST thin films deposited with condition of 90/10 (Ar/$O_2$) ratio, the composition of Ba/Sr/Bi was 0.35/0.4/0.25. Also, in the BBST thin films deposited with condition of 80/20(Ar/$O_2$) ratio, the composition of Br,Sr and Ti were relatively uniform. But the component of Bi and Ti were diffused into the Pt layers.

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