Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Employing of Metal Negative Ion in Halogen Plasmas

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  • Choi, Young-Il (Dept. of Electronics & Information, Chosun College of Science & Technology) ;
  • Lee, Bong-Ju (Division of Physics and Chemistry, College of Nature Science, Chosun University) ;
  • Lee, Kyung-Sub (Division of Electrical and Electronics Engineering, College of Engineering, Dong-Shin University)
  • Published : 2001.05.11
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Abstract

The Al etching was studied employing negative ions generated in the downstream $Cl_2$ plasma. In order to etch the Al film practically on an insulator covered electrode coupled with RF power, reduction of the negative self bias voltage (Vdc) was examined using a magnetic filter which trapped electrons. Addition of $SF_6$ and $H_2$ to a $Cl_2/BCl_3$ mixture reduced significantly Vdc.

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