A study of leakage characteristics in silicided p+/n shallow junctions using transmission electron microscopy (TEM) coupled with selective chemical etching

Choi, Chel-Jong (Department Materials Science and Engineering, Kwangju Institute Science and Technology) ;
Seong, Tae-Yeon (Department Materials Science and Engineering, Kwangju Institute Science and Technology) ;
Lee, Key-Min (Memory R&D Division, Hynix Semiconductor Inc.) ;
Lee, Joo-Hyoung (Memory R&D Division, Hynix Semiconductor Inc.) ;
Park, Young-Jin (Memory R&D Division, Hynix Semiconductor Inc.) ;
Lee, Hi-Deok (Department Electronics Engineering, Chungnam National University)