A Study on the Voltage Holding Ratio and Residual DC Property in the IPS Cell

IPS 셀의 전압보유율 및 잔류 DC 특성에 관한 연구

  • Jeon, Yong-Je (Dept. of Electrical & Electronic Eng., College of Eng., Yonsei University) ;
  • Kim, Hyang-Yul (IFT Process Eng. Dept., LCD Division, Hydis Co., Ltd.) ;
  • Seo, Dae-Shik (Dept. of Electrical & Electronic Eng., College of Eng., Yonsei University) ;
  • Kim, Jae-Hyung (Dept. of Physics, College of Science, Inje University) ;
  • Nam, Sang-Hee (Dept. of Physics, College of Science, Inje University)
  • Published : 2001.11.03

Abstract

The voltage holding ratio (VHR) and Residual DC property in the in-plane switching (IPS) cell was studied Several IPS cells which have different concentrations of cynao liquid crystals (LCs) and different resistivities of fluorine LCs were fabricated VHR and residual DC voltage in the IPS cells using the capacitance-voltage (C-V) hysteresis method was measured. We found that the VHR of the IPS cell was decreasing with increasing concentration of cyano LC. The residual DC voltage of the IPS cell was decreasing with increasing concentration of cyano LCs. We suggest that the high polarity of cyano LC helps reducing the residual DC voltage.

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