A fabrication and characterization of asymmetric 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT device using electron beam lithography

전자선 묘화 장치를 이용한 비대칭적인 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-게이트 PHEMT 공정 및 특성에 관한 연구

We have studied fabrication processes that form asymmetric $\Gamma$-gate with a 0.1${\mu}{\textrm}{m}$ gate length in MMIC's(Monolithic Microwave Integrated Circuits). Asymmetric $\Gamma$-gate was fabricated using mixture of PMMA and MCB. Thus pseudomorphic high electron mobility transistor (PHEMT's) with 0.1${\mu}{\textrm}{m}$ gate length was fabricated via several steps such as mesa isolation, metalization, recess, passivation. PHEMT's has the -1.75 V of pinch-off voltage (Vp), 63 mA of drain saturation current(Idss and 363.6 mS/mm of maximum transconductance (Gm) in DC characteristics and current gain cut-off frequency of 106 GHz and maximum frequency of oscillation of 160 GHz in RF characteristics.