Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2001.07a
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- Pages.1050-1053
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- 2001
Wheastone-bridge type MR sensors of Si(001)/NiO(300 $\AA$ )/NiFe bilayer system
Si(001)/NiO(300$\AA$ )/NiFe계 휘스톤 브리지형 자기저항소자
Abstract
There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/HiO(300