Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2001.07a
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- Pages.828-831
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- 2001
Characterization of Silicon Structures with pn-junctions Fabricated by Modified Direct Bonding Technique with Simultaneous Dopant Diffusion
불순물 확산을 동시에 수행하는 수정된 직접접합방법으로 제작된 pn 접합 실리콘소자의 특성
- Kim, Sang-Cheol ;
- Kim, Eun-dong ;
- Kim, Nam-kyun ;
- Bahng, Wook ;
- Kostina, L.S.
- Published : 2001.07.01
Abstract
A simple and versatile method of manufacturing semiconductor devices with pn-junctions used the silicon direct bonding technology with simultaneous impurity diffusion is suggested . Formation of p- or n- type layers was tried during the bonding procedure by attaching two wafers in the aqueous solutions of Al(NO