Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of thin-film type pressure sensors for high pressure

고압용 박막형 압력센서의 특성

  • 서정환 (부경대학교 전자공학과) ;
  • 최성규 (영남대학교 전자공학과) ;
  • 정찬익 (동서대학교 정보시스템공학부 메카트로닉스전공) ;
  • 류지구 (부경대학교 전자공학과) ;
  • 남효덕 (영남대학교 전자공학과) ;
  • 정귀상 (동서대학교 정보시스템공학부 메카트로닉스전공)
  • Published : 2001.07.01
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Abstract

This paper describes the fabrication and characteristics of CrN thin-film type pessure sensors, which the sensing elements were deposited on SUS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%)N$_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500${\AA}$ and annealing condition(300$^{\circ}C$, 3 hr) in Ar-10 %N$_2$deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, $\rho$=1147.65 ${\mu}$$\Omega$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4∼20 mA and the maximum non-linearity is 0.4 %FS and hysteresis is less than 0.2 %FS.

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