Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Improvement of Sensitivity in Micro Magnetoelastic Strain Sensors

마이크로 자기탄성스트레인센서의 고감토화

  • 신광호 (경성대학교 정보과학부) ;
  • 허진 (동아대학교 전기전자컴퓨터공학부) ;
  • 최헌일 (동아대학교 전기전자컴퓨터공학부) ;
  • 김영학 (부경대학교 전기전자계측공학부) ;
  • 사공건 (동아대학교 전기전자컴퓨터공학부)
  • Published : 2001.07.01
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Abstract

Recently we have reported that the meander-patterned amorphous FeCoSiB films exhibit large change in their high frequency impedance by applying a strain, suggesting that the films are very attractive for making of a highly sensitive strain sensor elements. In this study, the effect of anisotropy on a change in the impedance of sputtered amorphous film patterns was investigated in the frequency range from 1MHz to 1GHz. As a function of applied strains, the high frequency impedance was extremely changed in the case of film patterns with transverse anisotropy due to excellent magnetomechanical coupling properties. As a summary, the maximum figure of merit f has measured about 2600 in the case of transverse anisotropy, and about 500 in the case of longitudinal anisotropy at 500 MHz. These values of F are approximately more than 1000 times higher than that of a conventional metal strain gauge (F 2) and more than 10 times higher than that of a semiconductor gauge (F 200).

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