한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2001년도 하계학술대회 논문집
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- Pages.283-285
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- 2001
A New SOl LIGBT Structure with Improved Latch-Up Performance
- Sung, Woong-Je (Korea Univ. Department of electrical engineering Semiconductor and CAD Lab) ;
- Lee, Yong-11 (Korea Univ. Department of electrical engineering Semiconductor and CAD Lab) ;
- Park, Woo-Beom (Korea Univ. Department of electrical engineering Semiconductor and CAD Lab) ;
- Sung, Man-Young (Korea Univ. Department of electrical engineering Semiconductor and CAD Lab)
- 발행 : 2001.07.01
초록
In this paper, a new lateral insulated gate bipolar transistor (LIGBT) is proposed to improve the latch-up performance without current path underneath the n+ cathode region. The improvement of latch-up performance is verified using the two-dimensional simulator MEDICI and the simulation results on the latch-up current density are 3.12