한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2001년도 하계학술대회 논문집
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- Pages.255-258
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- 2001
Reverse Engineering을 이용한 $Al_{x}Ga_{1-x}As/In_{y}Ga_{1-y}$ As P-HEMTs의 구조적 분석
Structural analysis of $Al_{x}Ga_{1-x}As/In_{y}Ga_{1-y}$ As P-HEMTs reverse engineering
초록
In this paper, DC and small signal characteristics with different physical parameters are expected for p-HEMTs (Pseudomorphic High Electron Mobility Transistors) with different temperatures ranging from 300K to 623K which are widely used for a low noise and/or ultra high frequency device. A device of 0.2