한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2001년도 하계학술대회 논문집
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- Pages.119-122
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- 2001
사파이어 기판 위에 증착된 ZnO 박막의 후열처리에 따른 발광특성 연구
Effects of post-annealing treatment at various temperature on the light emission properties of ZnO thin films on sapphire
초록
ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique at the oxygen pressure of 350 mTorr. In order to investigate the effect of post-annealing treatment with oxygenn pressure of 350 mTorr on the optical property of ZnO thin films, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the optical properties of the ZnO thin films were characterized by PL(Photoluminescence) and structural properties of the ZnO were characterized by XRD, and have investigated structural property and optical property for application of light emission device.