Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Effects of post-annealing treatment at various temperature on the light emission properties of ZnO thin films on sapphire

사파이어 기판 위에 증착된 ZnO 박막의 후열처리에 따른 발광특성 연구

  • 강홍성 (연세대학교 전기전자공학과) ;
  • 심은섭 (연세대학교 전기전자공학과) ;
  • 강정석 (연세대학교 전기전자공학과) ;
  • 김종훈 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • Published : 2001.07.01
Download PDF
⟨ Previous Next ⟩

Abstract

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique at the oxygen pressure of 350 mTorr. In order to investigate the effect of post-annealing treatment with oxygenn pressure of 350 mTorr on the optical property of ZnO thin films, films have been annealed at various substrate temperatures after deposition. After post-annealing treatment in the oxygen ambient, the optical properties of the ZnO thin films were characterized by PL(Photoluminescence) and structural properties of the ZnO were characterized by XRD, and have investigated structural property and optical property for application of light emission device.

Keywords