Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.04b
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- Pages.147-151
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- 2000
Electrochemical Etch-stop Characteristics of TMAH:IPA:Pyrazine Solutions
TMAH/IPA/Pyrazine용액에 있어서 전기화학적 식각정지 특성
Abstract
This paper presents the electrochemical etch-stop characteristics of single-crystal silicon in a tetramethyl ammonium hyciroxide(TMAH):isopropyl alcohol(IPA):pyrazine solution. Addition of pyrazine to a TMAH:IPA etchant increases the etch-rate of (100) silicon, thus the elapsed time for etch-stop was shortened. The current-voltage(I-V) characteristics of n- and p-type silicon in a TMAH:IPA:pyrazine solution were obtained, respectively. Open circuit potential(OCP) and passivation potential(PP) of n- and p-type silicon, respectively, were obtained and applied potential was selected between n- and p-type silicon PP. The electrochemical etch-stop is applied to the fabrication of 801 microdiaphragms having
Keywords
- electrochemical etch-stop;
- tetramethyl ammonium hydroxide;
- isopropyl alcohol;
- pyrazine;
- silicon;
- open circuit potential;
- passivation potential;
- microdiaphragm