Generation of Coherent LO Phonons in GaAs/AlGaAs MQW's by the Impulsive Stimulated Raman Scattering

GaAs/AlGaAs 양자우물 구조에서 Impulsive Stimulated Raman Scattering 방법에 의한 결맞는 포논의 생성

After the invention of the femtosecond pulse lasers, generating and detecting the coherent optical phonons in various materials became possible. In bulk GaAs, which is a polar material, the coherent LO phonons are known to be generated by the ultrafast screening of the surface space-charge fields. However, little is known about the generation mechanisms of coherent phonons in GaAs quantum structures. (omitted)