Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Photoinduced anisotropy in the Ag and Cu photodoped chalcogenide As-Ge-Se-S thin films

칼코게나이드 As-Ge-Se-S 박막에서 Ag와 Cu 광도핑에 의한 광유기 이방성

  • 박종화 (광운대학교 전자재료공학과) ;
  • 장선주 (광운대학교 전자재료공학과) ;
  • 박정일 (광운대학교 전자재료공학과) ;
  • 이영종 (여주대학 전자공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 2000.11.01
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Abstract

We have investigated the photoinduced anisotropy in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin films, non-doped and photodoped by Ag and Cu. The films were exposed by the linearly polarized He-Ne laser light( $\lambda$=632.8nm). The Ag and Cu photodoping resulted in reducing the time of saturation photoinduced linearly dichroism. Also photoinduced linearly dichroism was increased up to maximum 184% by Ag photodoping and 138% by Cu photodoping, respectively. As the result of this study, the linearly dichroism can be interesting for different applications of photoinduced anisotropy. In addition, it will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.

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