Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.11a
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- Pages.532-534
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- 2000
Optical properties of Si thin films grown by PLD
PLD로 제작한 Si 박막에서의 광학적 특성분석
Abstract
Si thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was varied from 1 to 3 Torr. After deposition, Si thin film has been annealed again at nitrogen ambient. Strong violet-indigo photoluminescence have been observed from Si thin film annealed in nitrogen ambient gas. As increasing environmental gas pressure, weak green and red emissions from annealed Si thin films also observed by photoluminescence.