Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.11a
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- Pages.471-475
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- 2000
A Study on Selective Epitaxial Growth using Disilane and Hydrogen gas in Low Pressure chemical vapor deposition
$Si_{2}H_{6}$ 와 $H_2$ Gas를 이용한 LPCVD 내에서의 선택적 Epitaxy 성장에 관한 연구
Abstract
P-type (100) Si wafer patterned with 1000