Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2000.11b
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- Pages.325-328
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- 2000
The Study on Impurity Concentration Optimizing for the Refresh Time Improvement of DRAM
DRAM의 Refresh 시간 개선을 위한 불순물 농도 최적화에 관한 연구
- Lee Yong-Hui (Hyundai Electronics Industries Co., Ltd.) ;
- Woo Kyong-Hwan (Woosong Technical College) ;
- Yi Cheon Hee (Cheong Ju University)
- Published : 2000.11.01
Abstract
The control of the data retention time is a main issue for realizing future high density dynamic random access memory. In this paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced
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