A study on $P^{+}N$ junction diode by boron implantation

붕소 이온주입에 의한 $p^{+}n$ 접합 다이오드에 관한 연구

In this paper, we demonstrated an analytical description method of forward voltage drop and reverse voltage of $P^{+}N$ junction diode with <111> oriented antimony doped silicon wafer 60keV boron implantation computer simulation results. In order to make electrical activation of implanted carriers, thermal annealing are carried out by RTP method for 1min at $1000^{\circ}C$ inert gas condition.