Active control of field emitter arrays with a-Si:H TFTs

비정질 실리콘 박막 트랜지스터에 의한 전계방출기 어레이의 능동제어

  • 엄현석 (한국전자통신연구원(ETRI)) ;
  • 송윤호 (한국전자통신연구원(ETRI)) ;
  • 강승열 (한국전자통신연구원(ETRI)) ;
  • 정문연 (한국전자통신연구원(ETRI)) ;
  • 조영래 (한국전자통신연구원(ETRI)) ;
  • 황치선 (한국전자통신연구원(ETRI)) ;
  • 이상균 (한국전자통신연구원(ETRI)) ;
  • 김도형 (한국전자통신연구원(ETRI)) ;
  • 이진호 (한국전자통신연구원(ETRI))
  • Published : 2000.11.01

Abstract

Active-controlled field emitter arrays (ACFEAs) are developed by monolithically integrating molybdenum field emitter arrays with amorphous silicon thin film transistors (a-Si:H TFTs) on glass substrate. Transfer and output characteristics of the fabricated ACFEAs showed that the emission currents of FEAs can be accurately controlled by the gate bias voltages of TFTs. Also, the emission currents of the ACFEAs kept stable without any fluctuations during the 30 min-operation.

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