Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2000.06b
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- Pages.274-277
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- 2000
RTA Post-annealing Effect on Poly-Si Thin Film Transistors Fabricated by Metal Induced Lateral Crystallization
금속 유도 측면 결정화를 이용한 박막 트랜지스터의 RTA 후속열처리 효과
Abstract
Thin Film Transistor(TFTs) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature(500
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